BUK9Y11-30B NXP Semiconductors, BUK9Y11-30B Datasheet - Page 8

• Manufacturer Part Number: BUK9Y11-30B
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9Y11-30B_1
Product data sheet
Fig 13. Transfer characteristics: drain current as a
Fig 15. Source (diode forward) current as a function of
(A)
(S)
I
I
D
S
50
40
30
20
10
50
40
30
20
10
0
0
V
function of gate-source voltage; typical values
V
source-drain (diode forward) voltage; typical
values
0.0
0
DS
GS
= 25 V
= 0 V
0.2
1
T
T
T
0.4
j
j
j
= 175 C
= 175 C
= 25 C
0.6
2
T
j
= 25 C
V
0.8
GS
003aab408
003aab403
V
(V)
SD
(V)
Rev. 01 — 30 August 2007
1.0
3
Fig 14. Gate-source voltage as a function of gate
Fig 16. Single-pulse and repetitive avalanche rating;
V
(1) Single-pulse; T
(2) Single-pulse; T
(3) Repetitive.
(V)
I
(A)
AL
GS
10
10
5
4
3
2
1
0
1
2
10
T
charge; typical values
See
avalanche current as a function of avalanche
time
0
j
= 25 C; I
3
Table note 1
N-channel TrenchMOS logic level FET
10
D
5
= 25 A
2
j
j
= 25 C.
= 150 C.
V
of
DS
Table 3
BUK9Y11-30B
= 14 V
10
10
(2)
(3)
1
Limiting values.
(1)
V
15
DS
1
© NXP B.V. 2007. All rights reserved.
= 24 V
Q
t
AL
003aab404
003aaa850
G
(ms)
(nC)
20
10
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