BUK9Y30-75B NXP Semiconductors, BUK9Y30-75B Datasheet - Page 2

• Manufacturer Part Number: BUK9Y30-75B
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
BUK9Y30-75B_4
Product data sheet
Pin
1
2
3
4
mb
Type number
BUK9Y30-75B
Symbol Parameter
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
E
D
DM
S
SM
stg
j
DS
DGR
GS
tot
DS(AL)S
DS(AL)R
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
Repetitive avalanche rating limited by average junction temperature of 170 °C.
Refer to application note AN10273 for further information.
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive
drain-source avalanche
energy
repetitive drain-source
avalanche energy
Pinning
Symbol
S
S
S
G
D
Ordering information
Limiting values
Package
Name
LFPAK
Description
source
source
source
gate
mounting base;
connected to drain
Description
plastic single-ended surface-mounted package (LFPAK); 4 leads
Conditions
T
R
T
T
T
T
T
t
I
T
see
p
D
j
mb
mb
mb
mb
mb
j(init)
GS
≤ 10 μs; pulsed; T
≥ 25 °C; T
= 34 A; V
Figure 3
= 25 °C; V
= 100 °C; V
= 25 °C; t
= 25 °C; see
= 25 °C
= 20 kΩ; T
= 25 °C; unclamped
sup
j
Rev. 04 — 10 April 2008
≤ 175 °C
p
GS
≤ 75 V; R
mb
≤ 10 μs; pulsed; see
GS
Figure 2
= 5 V; see
≥ 25 °C; T
= 5 V; see
mb
= 25 °C
Simplified outline
GS
= 50 Ω; V
mb
Figure 1
SOT669 (LFPAK)
Figure 1
≤ 175 °C
1 2 3 4
Figure 4
GS
and
mb
= 5 V;
N-channel TrenchMOS logic level FET
4
[1][2]
[3]
BUK9Y30-75B
-15
-55
Min
-
-
-
-
-
-
-55
-
-
-
-
Graphic symbol
Max
75
75
15
34
24
137
85
175
175
34
137
78
-
mbb076
G
© NXP B.V. 2008. All rights reserved.
D
S
Version
SOT669
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
J
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