2N7002 NXP Semiconductors, 2N7002 Datasheet - Page 7

• Manufacturer Part Number: 2N7002
• Description: N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2N7002
Product data sheet
Fig 9.
Fig 11. Source current as a function of source-drain
V
GS(th)
(V)
(A)
I
S
0.8
0.6
0.4
0.2
3
2
1
0
1
0
-60
junction temperature
voltage; typical values
Gate-source threshold voltage as a function of
0.2
0.4
0
150 °C
max
typ
min
60
0.6
120
0.8
T
All information provided in this document is subject to legal disclaimers.
j
003aab356
= 25 °C
V
003aab101
T
SD
j
(°C)
(V)
180
Rev. 7 — 8 September 2011
1
Fig 10. Sub-threshold drain current as a function of
Fig 12. Input, output and reverse transfer capacitances
(pF)
C
(A)
10
10
10
10
I
10
D
10
-3
-4
-5
-6
2
1
10
gate-source voltage
as a function of drain-source voltage; typical
values
0
-1
60 V, 300 mA N-channel Trench MOSFET
1
1
min
10
2
typ
V
© NXP B.V. 2011. All rights reserved.
V
GS
DS
003aab100
003aab357
2N7002
max
C
C
C
(V)
(V)
iss
oss
rss
10
3
2
7 of 13