BSH105 NXP Semiconductors, BSH105 Datasheet - Page 5

• Manufacturer Part Number: BSH105
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
August 1998
N-channel enhancement mode
MOS transistor
Fig.13. Typical turn-on gate-charge characteristics.
10
9
8
7
6
5
4
3
2
1
0
0
Gate-source voltage, VGS (V)
Tj = 25 C
RD = 20 Ohms
VDD = 20 V
2
Gate charge, QG (nC)
V
GS
= f(Q
4
G
)
6
BSH105
8
5
-4.5
-3.5
-2.5
-1.5
-0.5
I
-5
-4
-3
-2
-1
0
F
= f(V
0
Source-Drain Diode Current, IF (A)
Fig.14. Typical reverse diode current.
SDS
-0.2
); conditions: V
Drain-Source Voltage, VSDS (V)
-0.4
-0.6
GS
150 C
= 0 V; parameter T
Product specification
-0.8
Tj = 25 C
-1
BSH105
BSH105
Rev 1.000
-1.2
j