BSH201 NXP Semiconductors, BSH201 Datasheet - Page 5
![Logic level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology](/photos/41/52/415233/sot023_3d_sml.gif)
BSH201
Manufacturer Part Number
BSH201
Description
Logic level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
Manufacturer
NXP Semiconductors
Datasheet
1.BSH201.pdf
(7 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BSH201
Manufacturer:
NXP
Quantity:
35 000
Part Number:
BSH201
Manufacturer:
NXP/恩智浦
Quantity:
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Part Number:
BSH201,215
Manufacturer:
NEXPERIA/安世
Quantity:
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Philips Semiconductors
August 1998
P-channel enhancement mode
MOS transistor
Fig.13. Typical turn-on gate-charge characteristics.
-14
-12
-10
-8
-6
-4
-2
0
0
Gate-source voltage, VGS (V)
VDD = 10 V
RD = 20 Ohms
Tj = 25 C
1
Gate charge, (nC)
V
2
GS
= f(Q
3
G
)
4
BSH201
5
5
3.5
2.5
1.5
0.5
I
3
2
1
0
F
0
= f(V
Source-Drain Diode Current, IF (A)
Fig.14. Typical reverse diode current.
SDS
); conditions: V
0.5
Drain-Source Voltage, VSDS (V)
1
GS
150 C
= 0 V; parameter T
Tj = 25 C
Product specification
1.5
BSH201
BSH201
Rev 1.000
2
j