BSH202 NXP Semiconductors, BSH202 Datasheet - Page 5

• Manufacturer Part Number: BSH202
• Description: Logic level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
August 1998
P-channel enhancement mode
MOS transistor
Fig.13. Typical turn-on gate-charge characteristics.
-14
-12
-10
-8
-6
-4
-2
0
0
Gate-source voltage, VGS (V)
RD = 50 Ohms
VDD = 15 V
Tj = 25 C
1
Gate charge, (nC)
V
GS
= f(Q
2
G
)
3
BSH202
4
5
3.5
2.5
1.5
0.5
I
4
3
2
1
0
F
0
= f(V
Source-Drain Diode Current, IF (A)
Fig.14. Typical reverse diode current.
SDS
); conditions: V
0.5
Drain-Source Voltage, VSDS (V)
150 C
1
GS
Tj = 25 C
= 0 V; parameter T
Product specification
1.5
BSH202
BSH202
Rev 1.000
2
j