BSH203 NXP Semiconductors, BSH203 Datasheet - Page 5

• Manufacturer Part Number: BSH203
• Description: Logic level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
August 1998
P-channel enhancement mode
MOS transistor
Fig.13. Typical turn-on gate-charge characteristics.
-7
-6
-5
-4
-3
-2
-1
0
0
Gate-Source Voltage, VGS (V)
RD = 20 Ohms
VDD = 10 V
Tj = 25 C
0.5
1
Gate Charge, Qg (nC)
V
GS
1.5
= f(Q
G
2
)
2.5
BSH203
3
5
4.5
3.5
2.5
1.5
0.5
I
5
4
3
2
1
0
F
0
= f(V
Source-Drain Diode Current, IF (A)
Fig.14. Typical reverse diode current.
SDS
); conditions: V
0.5
Drain-Source Voltage, VSDS (V)
1
150 C
GS
= 0 V; parameter T
1.5
Product specification
Tj = 25 C
2
BSH203
BSH203
Rev 1.000
2.5
j