BSH205 NXP Semiconductors, BSH205 Datasheet - Page 5

• Manufacturer Part Number: BSH205
• Description: Logic level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
August 1998
P-channel enhancement mode
MOS transistor
Fig.13. Typical turn-on gate-charge characteristics.
-6
-5
-4
-3
-2
-1
0
0
Gate-source voltage, VGS (V)
VDD = 10 V
RD = 20 Ohms
Tj = 25 C
1
Gate charge, (nC)
V
2
GS
= f(Q
3
G
)
4
BSH205
5
5
4.5
3.5
2.5
1.5
0.5
I
5
4
3
2
1
0
F
0
= f(V
Source-Drain Diode Current, IF (A)
Fig.14. Typical reverse diode current.
SDS
0.2
); conditions: V
Drain-Source Voltage, VSDS (V)
0.4
0.6
150 C
GS
0.8
= 0 V; parameter T
Product specification
Tj = 25 C
1
1.2
BSH205
BSH205
Rev 1.000
1.4
j