BSH207 NXP Semiconductors, BSH207 Datasheet - Page 5

Logic level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology

BSH207

Manufacturer Part Number
BSH207
Description
Logic level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
Manufacturer
NXP Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSH207
Manufacturer:
NXP
Quantity:
45 000
Philips Semiconductors
August 1998
P-channel enhancement mode
MOS transistor
Fig.13. Typical turn-on gate-charge characteristics.
-5
-4
-3
-2
-1
0
0
Gate-source voltage, VGS (V)
VDD = 10 V
RD = 10 Ohms
Tj = 25 C
1
2
3
Gate charge, (nC)
V
GS
4
= f(Q
5
G
)
6
7
BSH207
8
9
5
4.5
3.5
2.5
1.5
0.5
I
5
4
3
2
1
0
F
0
= f(V
Source-Drain Diode Current, IF (A)
Fig.14. Typical reverse diode current.
SDS
0.2
); conditions: V
Drain-Source Voltage, VSDS (V)
0.4
150 C
0.6
GS
0.8
= 0 V; parameter T
Tj = 25 C
Product specification
1
1.2
BSH207
BSH207
Rev 1.000
1.4
j

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