BSN20 NXP Semiconductors, BSN20 Datasheet - Page 9

Extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BSN20

Manufacturer Part Number
BSN20
Description
Extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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9. Package outline
Fig 14. SOT23.
Philips Semiconductors
9397 750 07213
Product specification
Plastic surface mounted package; 3 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT23
1.1
0.9
A
max.
A
0.1
1
1
0.48
0.38
b
p
IEC
e 1
0.15
0.09
c
D
e
3.0
2.8
D
b p
3
TO-236AB
JEDEC
1.4
1.2
E
REFERENCES
0
2
Rev. 03 — 26 June 2000
1.9
e
w
0.95
B
M
e
1
scale
B
EIAJ
1
N-channel enhancement mode field-effect transistor
2.5
2.1
H
E
0.45
0.15
L
A
p
2 mm
A 1
0.55
0.45
Q
H E
0.2
E
v
detail X
PROJECTION
0.1
EUROPEAN
w
L p
A
© Philips Electronics N.V. 2000. All rights reserved.
Q
c
X
v
ISSUE DATE
M
97-02-28
99-09-13
BSN20
A
SOT23
9 of 13

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