BSP89 NXP Semiconductors, BSP89 Datasheet - Page 3

• Manufacturer Part Number: BSP89
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an epoxy printed circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain tab minimum
CHARACTERISTICS
T
2001 May 18
R
V
I
I
V
R
C
C
C
Switching times (see Figs 3 and 4)
t
t
j
DSS
GSS
on
off
SYMBOL
SYMBOL
(BR)DSS
GSth
Y
th j-a
= 25 C unless otherwise specified.
DSon
iss
oss
rss
N-channel enhancement mode
vertical D-MOS transistor
fs
6 cm
2
.
thermal resistance from junction to ambient; note 1
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
drain-source on-state resistance
transfer admittance
input capacitance
output capacitance
reverse transfer capacitance
turn-on time
turn-off time
PARAMETER
PARAMETER
I
V
V
I
I
I
I
V
V
V
I
V
I
V
D
D
D
D
D
D
D
DS
GS
DS
DS
DS
GS
GS
= 10 A; V
= 1 mA; V
= 340 mA; V
= 340 mA; V
= 340 mA; V
= 250 mA; V
= 250 mA; V
= 60 V; V
= 25 V; V
= 25 V; V
= 25 V; V
= 20 V; V
= 0 to 10 V
= 0 to 10 V
3
CONDITIONS
GS
GS
GS
GS
GS
GS
GS
GS
DS
DD
DD
DS
= V
= 0
= 0
= 0; f = 1 MHz
= 0; f = 1 MHz
= 0; f = 1 MHz
= 25 V
= 0
= 10 V
= 4.5 V
= 50 V;
= 50 V;
DS
0.8
140
240
MIN.
VALUE
83.3
2.8
600
100
20
10
6
47
TYP.
Product specification
200
100
2
5
7.5
120
30
15
10
60
MAX.
BSP89
UNIT
K/W
V
nA
nA
V
mS
pF
pF
pF
ns
ns
UNIT