BSS84 NXP Semiconductors, BSS84 Datasheet - Page 6

• Manufacturer Part Number: BSS84
• Description: Logic level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BSS84_6
Product data sheet
Fig 4.
Fig 6.
(mA)
(mA)
I
I
600
400
200
600
400
200
D
D
0
0
0
T
Output characteristics: drain current as a
function of drain-source voltage; typical
values
0
T
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
j
j
= 25 C
= 25 C; V
V
GS
= 10 V
2
2
DS
4
= 10 V
7.5 V
4
6
6
6 V
8
8
10
V
V
mld197
GS
4 V
2.5 V
mld196
5 V
3 V
DS
Rev. 06 — 16 December 2008
(V)
(V)
12
10
P-channel enhancement mode vertical DMOS transistor
Fig 5.
Fig 7.
R
DSon(25 C)
R
R
DSon
DSon
( )
1.8
1.4
1.0
0.6
60
40
20
0
1
T
Drain-source on-state resistance as a function
of drain current; typical values
(1) I
(2) I
Normalized drain-source on-state resistance
factor as a function of junction temperature
50
j
= 25 C
D
D
= 130 mA; V
= 20 mA; V
0
10
V
GS
GS
= 2.5 V
GS
= 2.4 V
50
= 10 V
10
3 V
2
100
I
4 V
D
© NXP B.V. 2008. All rights reserved.
(mA)
T
j
5 V
mld198
mld194
( C)
BSS84
7.5 V
(1)
(2)
10 V
10
150
3
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