BSS87 NXP Semiconductors, BSS87 Datasheet - Page 2

• Manufacturer Part Number: BSS87
• Description: Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
N-channel enhancement mode vertical D-MOS transistor
in a SOT89 package.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead minimum
2001 May 18
V
V
I
P
R
V
V
I
I
P
T
T
D
D
DM
y
SYMBOL
SYMBOL
stg
j
Direct interface to C-MOS, TTL, etc.
High-speed switching
No secondary breakdown
Low R
Line current interruptor in telephone sets
Applications in relay, high-speed and line transformer
drivers.
DS
GSO
tot
DS
GSO
tot
DSon
N-channel enhancement mode
vertical D-MOS transistor
fs
10
DSon
10 mm
.
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
total power dissipation
drain-source on-state resistance
forward transfer admittance
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
junction temperature
PARAMETER
PARAMETER
open drain
T
I
I
open drain
T
D
D
amb
amb
= 400 mA; V
= 400 mA; V
25 C
25 C; note 1
2
CONDITIONS
CONDITIONS
PINNING - SOT89
handbook, halfpage
GS
DS
Fig.1 Simplified outline (SOT89) and symbol.
= 10 V
= 25 V
PIN
Bottom view
1
2
3
1
2
source
drain
gate
140
3
MIN.
55
MIN.
MAM355
DESCRIPTION
1.6
750
TYP.
Product specification
g
200
400
1.6
1
+150
150
20
MAX.
200
400
1
3
MAX.
20
d
s
BSS87
V
V
mA
A
W
C
C
UNIT
V
V
mA
W
mS
UNIT