NX3008NBKT NXP Semiconductors, NX3008NBKT Datasheet - Page 3
![N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology](/photos/41/52/415248/sot416_3d_sml.gif)
NX3008NBKT
Manufacturer Part Number
NX3008NBKT
Description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
Manufacturer
NXP Semiconductors
Datasheet
1.NX3008NBKT.pdf
(16 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NX3008NBKT
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
5. Limiting values
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
NX3008NBKT
Product data sheet
Symbol
V
V
I
I
P
T
T
T
Source-drain diode
I
ESD maximum rating
V
D
DM
S
j
amb
stg
DS
GS
tot
ESD
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Measured between all pins.
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
peak drain current
total power dissipation
junction temperature
ambient temperature
storage temperature
source current
electrostatic discharge voltage
All information provided in this document is subject to legal disclaimers.
Conditions
T
V
V
T
T
T
T
HBM
Rev. 1 — 1 August 2011
j
amb
amb
sp
amb
GS
GS
= 25 °C
= 25 °C
= 4.5 V; T
= 4.5 V; T
= 25 °C; single pulse; t
= 25 °C
= 25 °C
amb
amb
= 25 °C
= 100 °C
30 V, 350 mA N-channel Trench MOSFET
p
≤ 10 µs
2
.
NX3008NBKT
[1]
[1]
[2]
[1]
[1]
[3]
Min
-
-8
-
-
-
-
-
-
-55
-55
-65
-
-
© NXP B.V. 2011. All rights reserved.
150
150
150
Max
30
8
350
230
1.4
250
300
770
300
2000
Unit
V
V
mA
mA
A
mW
mW
mW
°C
°C
°C
mA
V
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