NX3008PBK NXP Semiconductors, NX3008PBK Datasheet - Page 4

• Manufacturer Part Number: NX3008PBK
• Description: P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
NX3008PBK
Product data sheet
Fig 1.
Fig 3.
P
(%)
der
120
80
40
0
-75
function of junction temperature
voltage
Normalized total power dissipation as a
I
(1) t
(2) t
(3) t
(4) DC; T
(5) DC; T
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
DM
is a single pulse
p
p
p
= 1 ms
= 10 ms
= 100 ms
-25
sp
amb
(A)
-10
-10
l
D
= 25 °C
-10
= 25 °C; 1 cm
-1
-1
-2
-10
25
-1
75
2
drain mounting pad
125
All information provided in this document is subject to legal disclaimers.
001aao121
T
j
(°C)
-1
175
Rev. 1 — 1 August 2011
Fig 2.
(%)
I
der
120
80
40
0
-75
function of junction temperature
Normalized continuous drain current as a
-10
30 V, 230 mA P-channel Trench MOSFET
-25
V
DS
(1)
(2)
(3)
(4)
(5)
(V)
25
001aao255
NX3008PBK
75
-10
2
125
© NXP B.V. 2011. All rights reserved.
001aao122
T
j
(°C)
175
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