NX7002AKW NXP Semiconductors, NX7002AKW Datasheet - Page 3

• Manufacturer Part Number: NX7002AKW
• Description: N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Limiting values
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
NX7002AKW
Product data sheet
Symbol
V
V
I
I
P
T
T
T
Source-drain diode
I
D
DM
S
Fig 1.
j
amb
stg
DS
GS
tot
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
P
(%)
der
120
80
40
0
−75
function of junction temperature
Normalized total power dissipation as a
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
peak drain current
total power dissipation
junction temperature
ambient temperature
storage temperature
source current
−25
25
75
125
All information provided in this document is subject to legal disclaimers.
017aaa123
T
j
(°C)
175
Conditions
T
V
V
T
T
T
T
Rev. 1 — 1 March 2012
j
amb
amb
sp
amb
GS
GS
= 25 °C
= 25 °C
= 10 V; T
= 10 V; T
= 25 °C; single pulse; t
= 25 °C
= 25 °C
Fig 2.
amb
amb
(%)
= 25 °C
= 100 °C
I
der
120
80
40
0
−75
function of junction temperature
Normalized continuous drain current as a
60 V, single N-channel Trench MOSFET
p
≤ 10 µs
−25
2
25
.
[1]
[1]
[2]
[1]
[1]
NX7002AKW
75
Min
-
-20
-
-
-
-
-
-
-55
-55
-65
-
© NXP B.V. 2012. All rights reserved.
125
017aaa124
T
j
150
150
150
Max
60
20
170
100
680
220
255
1060
170
(°C)
175
Unit
V
V
mA
mA
mA
mW
mW
mW
°C
°C
°C
mA
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