PHD9NQ20T NXP Semiconductors, PHD9NQ20T Datasheet - Page 2

• Manufacturer Part Number: PHD9NQ20T
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
Table 2.
[1]
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PHD9NQ20T
Product data sheet
Pin
1
2
3
mb
Type number
PHD9NQ20T
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
I
D
DM
S
SM
AS
stg
j
DS
DGR
GS
tot
DS(AL)S
It is not possible to make connection to pin 2.
Symbol Description
G
D
S
D
Pinning information
Ordering information
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
non-repetitive avalanche current
gate
drain
source
mounting base; connected to drain
Package
Name
DPAK
[1]
Description
plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 16 December 2010
Conditions
T
T
V
V
pulsed; T
T
T
pulsed; T
V
V
R
V
R
j
j
mb
mb
GS
GS
GS
sup
sup
GS
GS
Simplified outline
≥ 25 °C; T
≥ 25 °C; T
= 25 °C
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
= 50 Ω
= 50 Ω; unclamped
≤ 25 V; unclamped; t
≤ 25 V; V
mb
mb
SOT428 (DPAK)
= 25 °C
= 25 °C
j
j
≤ 175 °C
≤ 175 °C; R
mb
mb
j(init)
GS
1
= 100 °C
= 25 °C
= 10 V; T
mb
2
= 25 °C; I
N-channel TrenchMOS standard level FET
3
GS
p
j(init)
= 100 µs;
D
= 20 kΩ
= 7.2 A;
= 25 °C;
Graphic symbol
PHD9NQ20T
Min
-
-
-30
-
-
-
-
-55
-55
-
-
-
-
mbb076
G
© NXP B.V. 2010. All rights reserved.
175
175
Version
SOT428
Max
200
200
30
6.2
8.7
35
88
8.7
35
93
8.7
D
S
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
A
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