PHK04P02T NXP Semiconductors, PHK04P02T Datasheet - Page 7

• Manufacturer Part Number: PHK04P02T
• Description: Logic level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PHK04P02T
Product data sheet
Fig 11. Sub-threshold drain current as a function of
Fig 13. Gate-source voltage as a function of turn-on
V
(A)
(V)
I
10
10
10
10
10
10
GS
D
−5
−4
−3
−2
−1
−2
−3
−4
−5
−6
−7
0
−1.0
gate-source voltage
gate charge; typical values
V
T
0
j
DS
= 25 °C; I
= -5 V; T
−0.8
2
D
j
= -1 A
= 25 °C
−0.6
4
−0.4
6
−0.2
All information provided in this document is subject to legal disclaimers.
8
001aam083
001aam085
Q
V
GS
G
(nC)
(V)
Rev. 02 — 14 December 2010
10
0
Fig 12. Input, output and reverse transfer capacitances
Fig 14. Reverse diode current as a function of reverse
(pF)
(A)
IF
C
10
10
10
−10
5
4
3
2
1
0
3
2
as a function of drain-source voltage; typical
values
diode voltage; typical values
V
V
0
−1
GS
GS
P-channel vertical D-MOS logic level FET
= 0 V; f = 1 MHz
= 0 V
0.4
−1
T
j
= 150 °C
PHK04P02T
−10
0.8
T
j
= 25 °C
VSDS (V)
V
© NXP B.V. 2010. All rights reserved.
C
DS
C
C
001aam084
001aam086
oss
iss
rss
(V)
−10
1.2
2
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