PHP18NQ11T NXP Semiconductors, PHP18NQ11T Datasheet - Page 8
![Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology](/photos/41/50/415038/sot078_3d_sml.gif)
PHP18NQ11T
Manufacturer Part Number
PHP18NQ11T
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet
1.PHP18NQ11T.pdf
(13 pages)
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PHP18NQ11T
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NXP Semiconductors
PHP18NQ11T_2
Product data sheet
Fig 13. Source current as a function of source-drain voltage; typical values
(A)
I
S
20
15
10
5
0
0
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 10 March 2010
0.3
T
j
= 175 °C
0.6
0.9
25 °C
V
N-channel TrenchMOS standard level FET
003aaa596
SD
(V)
1.2
PHP18NQ11T
© NXP B.V. 2010. All rights reserved.
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