PHP191NQ06LT NXP Semiconductors, PHP191NQ06LT Datasheet - Page 7

• Manufacturer Part Number: PHP191NQ06LT
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PHP191NQ06LT_2
Product data sheet
Fig 9.
Fig 11. Gate-source voltage as a function of gate
V
(V)
GS
10
1.5
0.5
a
8
6
4
2
0
2
1
0
-60
factor as a function of junction temperature
charge; typical values
Normalized drain-source on-state resistance
0
I
T
D
j
= 25 °C
= 25 A
50
0
14 V
100
60
V
DD
= 44 V
120
150
All information provided in this document is subject to legal disclaimers.
Q
T
G
j
03ne89
( ° C)
(nC)
03ar07
Rev. 02 — 14 January 2010
180
200
Fig 10. Drain-source on-state resistance as a function
Fig 12. Sub-threshold drain current as a function of
R
(mΩ)
DSon
(pF)
10
10
10
10
C
10
5
4
3
2
8
6
4
2
0
10
of drain current; typical values
gate-source voltage
0
−1
T
j
= 25 °C
N-channel TrenchMOS logic level FET
80
1
PHP191NQ06LT
160
10
V
GS
V
© NXP B.V. 2010. All rights reserved.
= 3.2 V
I
DS
D
C
C
C
(A)
rss
iss
oss
(V)
3.6 V
03ar06
03ar03
10 V
4 V
5 V
10
240
2
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