PHP29N08T NXP Semiconductors, PHP29N08T Datasheet - Page 6

• Manufacturer Part Number: PHP29N08T
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PHP29N08T_2
Product data sheet
Fig 5.
Fig 7.
(A)
(A)
I
I
10
10
10
10
10
D
D
30
20
10
−2
−3
−4
−5
−6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
2
T
j
= 25 °C
min
0.5
3
typ
1
4
11 V
max
9 V
1.5
5
V
V
V
GS
GS
DS
= 6 V
7.5 V
6.5 V
03aj07
03aj13
(V)
(V)
8 V
7 V
Rev. 02 — 12 March 2009
2
6
Fig 6.
Fig 8.
V
GS(th)
(A)
(V)
I
D
6.4
4.8
3.2
1.6
30
20
10
0
0
−60
function of gate-source voltage; typical values
junction temperature
Transfer characteristics: drain current as a
Gate-source threshold voltage as a function of
0
V
N-channel TrenchMOS standard level FET
DS
> I
D
2
× R
0
DSon
175 °C
4
60
PHP29N08T
max
6
min
typ
T
j
= 25 °C
120
© NXP B.V. 2009. All rights reserved.
8
T
V
j
GS
(°C)
03aj09
03aj14
(V)
180
10
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