PMBF170 NXP Semiconductors, PMBF170 Datasheet - Page 10
PMBF170
Manufacturer Part Number
PMBF170
Description
Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet
1.PMBF170.pdf
(13 pages)
Available stocks
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10. Revision history
Table 6:
Philips Semiconductors
9397 750 07208
Product specification
Rev Date
03
02
01
20000622
19970623
19901031
Revision history
CPCN
HZG303
-
-
Description
Product specification; third version; supersedes PMBF170_CNV_2 of 970623.
Converted from VDMOS (Nijmegen) to TrenchMOS™ technology (Hazel Grove).
Product specification; second version.
Product specification; initial version.
Rev. 03 — 23 June 2000
N-channel enhancement mode field-effect transistor
© Philips Electronics N.V. 2000. All rights reserved.
PMBF170
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