PMDT290UNE NXP Semiconductors, PMDT290UNE Datasheet - Page 7

Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology

PMDT290UNE

Manufacturer Part Number
PMDT290UNE
Description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
PMDT290UNE
Product data sheet
Fig 6.
Fig 8.
R
DSon
(Ω)
(A)
I
D
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
2.0
1.5
1.0
0.5
0.0
0.0
function of drain-source voltage; typical values
of drain current; typical values
T
Output characteristics: drain current as a
T
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
Drain-source on-state resistance as a function
0
j
j
= 25 °C
= 25 °C
GS
GS
GS
GS
GS
GS
0.1
(1)
4.5 V
2.5 V
1.8 V
= 1.3 V
= 1.4 V
= 1.6 V
= 1.8 V
= 2.5 V
= 4.5 V
1
0.2
(2)
0.3
2
V
0.4
GS
1.4 V
1.2 V
1.0 V
= 1.6 V
0.5
3
All information provided in this document is subject to legal disclaimers.
V
I
017aaa351
017aaa353
(4)
(5)
(6)
D
(3)
0.6
DS
(A)
(V)
Rev. 1 — 13 September 2011
0.7
4
Fig 7.
Fig 9.
R
DSon
(Ω)
(A)
I
10
10
10
10
D
2.0
1.5
1.0
0.5
0.0
20 V, 800 mA dual N-channel Trench MOSFET
–3
–4
–5
–6
0.00
gate-source voltage
of gate-source voltage; typical values
T
(1) minimum values
(2) typical values
(3) maximum values
Sub-threshold drain current as a function of
I
(1) T
(2) T
Drain-source on-state resistance as a function
0
D
j
= 25 °C; V
= 400 mA
j
j
= 150 °C
= 25 °C
0.25
1
DS
0.50
(1)
= 5 V
2
PMDT290UNE
(2)
0.75
3
(3)
1.00
© NXP B.V. 2011. All rights reserved.
4
017aaa352
017aaa354
V
V
(1)
(2)
GS
GS
(V)
(V)
1.25
5
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