PMN20EN NXP Semiconductors, PMN20EN Datasheet
PMN20EN
Related parts for PMN20EN
PMN20EN Summary of contents
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... PMN20EN 30 V, 6.7 A N-channel Trench MOSFET Rev. 1 — 30 May 2011 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching 1.3 Applications ...
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... GS amb °C; single pulse; t amb °C amb ° °C amb All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 May 2011 PMN20EN 30 V, 6.7 A N-channel Trench MOSFET Version SOT457 Min Max - 30 -20 20 [1] - 6.7 [1] - 4.5 ≤ 10 µs ...
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... T (°C) j Fig 2. Normalized continuous drain current as a function of junction temperature 1 2 All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 May 2011 PMN20EN 30 V, 6.7 A N-channel Trench MOSFET 017aaa124 − 125 175 T (°C) j 017aaa240 (1) (2) (3) (4) ...
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... Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMN20EN Product data sheet Conditions in free air – – All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 May 2011 PMN20EN 30 V, 6.7 A N-channel Trench MOSFET Min Typ Max [1] - 198 230 [ ...
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... G(ext ° 1 ° All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 May 2011 PMN20EN 30 V, 6.7 A N-channel Trench MOSFET Min Typ Max 1.5 2 100 - - 100 ...
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... (1) T (2) T Fig 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 May 2011 PMN20EN 30 V, 6.7 A N-channel Trench MOSFET 017aaa244 (1) ( 017aaa246 ...
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... MHz; V (1) C (2) C (3) C Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 May 2011 PMN20EN 30 V, 6.7 A N-channel Trench MOSFET 017aaa248 0 60 120 T (°C) j 017aaa250 (1) ...
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... Q (nC °C Fig 15. Gate charge waveform definitions 2 (A) 1.5 (1) 1.0 0.5 0.0 0.0 0.2 0.4 0.6 All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 May 2011 PMN20EN 30 V, 6.7 A N-channel Trench MOSFET GS(pl) V GS(th GS1 GS2 G(tot) 017aaa137 017aaa252 (2) 0 ...
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... Test information Fig 17. Duty cycle definition PMN20EN Product data sheet duty cycle δ 006aaa812 All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 May 2011 PMN20EN 30 V, 6.7 A N-channel Trench MOSFET © NXP B.V. 2011. All rights reserved ...
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... 3.1 1.7 3.0 0.6 0.33 0.95 2.7 1.3 2.5 0.2 0.23 REFERENCES JEDEC JEITA SC-74 All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 May 2011 PMN20EN 30 V, 6.7 A N-channel Trench MOSFET detail 0.2 0.2 0.1 EUROPEAN ISSUE DATE PROJECTION 05-11-07 06-03-16 © NXP B.V. 2011. All rights reserved. ...
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... All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 May 2011 PMN20EN 30 V, 6.7 A N-channel Trench MOSFET solder lands solder resist solder paste occupied area Dimensions in mm sot457_fr solder lands solder resist occupied area Dimensions in mm preferred transport ...
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... NXP Semiconductors 11. Revision history Table 8. Revision history Document ID Release date PMN20EN v.1 20110530 PMN20EN Product data sheet Data sheet status Change notice Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 May 2011 PMN20EN 30 V, 6.7 A N-channel Trench MOSFET ...
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... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 May 2011 PMN20EN 30 V, 6.7 A N-channel Trench MOSFET © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 May 2011 PMN20EN 30 V, 6.7 A N-channel Trench MOSFET © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PMN20EN All rights reserved. Date of release: 30 May 2011 Document identifier: PMN20EN ...