PMN25EN NXP Semiconductors, PMN25EN Datasheet - Page 9

• Manufacturer Part Number: PMN25EN
• Description: N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PMN25EN
Product data sheet
Fig 12. Gate-source threshold voltage as a function of
Fig 14. Gate-source voltage as a function of gate
V
GS(th)
V
(V)
(V)
GS
10
3
2
1
0
8
6
4
2
0
–60
0.0
junction temperature
charge; typical values
I
(1) maximum values
(2) typical values
(3) minimum values
I
D
D
= 0.25 mA; V
= 6 A; V
2.5
0
DS
= 10 V; T
DS
= V
5.0
60
(1)
(2)
(3)
GS
amb
= 25 °C
120
7.5
All information provided in this document is subject to legal disclaimers.
Q
017aaa249
T
017aaa313
G
j
(°C)
(nC)
10.0
180
Rev. 1 — 29 August 2011
Fig 13. Input, output and reverse transfer capacitances
Fig 15. Gate charge waveform definitions
(pF)
C
10
10
10
3
2
10
as a function of drain-source voltage; typical
values
f = 1 MHz; V
(1) C
(2) C
(3) C
V
–1
V
V
V
GS(pl)
DS
GS(th)
GS
iss
oss
rss
30 V, 6.2 A N-channel Trench MOSFET
Q
GS1
GS
1
I
Q
D
GS
= 0 V
Q
GS2
Q
G(tot)
Q
GD
10
PMN25EN
V
© NXP B.V. 2011. All rights reserved.
DS
017aaa317
017aaa137
(1)
(2)
(3)
(V)
10
2
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