PMN35EN NXP Semiconductors, PMN35EN Datasheet - Page 4

• Manufacturer Part Number: PMN35EN
• Description: N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Thermal characteristics
Table 6.
[1]
[2]
PMN35EN
Product data sheet
Symbol
R
R
Fig 4.
Fig 5.
th(j-a)
th(j-sp)
Z
Z
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm
(K/W)
(K/W)
th(j-a)
th(j-a)
10
10
10
10
10
10
1
1
3
2
3
2
10
10
FR4 PCB, standard footprint
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
FR4 PCB, mounting pad for drain 6 cm
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
–3
–3
Thermal characteristics
duty cycle = 1
duty cycle = 1
0.75
0.33
0.05
0.01
0.75
0.33
0.05
0
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
0.25
0.25
0.02
0.02
0.01
0.5
0.1
0.5
0.1
0
10
10
–2
–2
Conditions
in free air
All information provided in this document is subject to legal disclaimers.
10
10
–1
–1
2
Rev. 1 — 20 July 2011
1
1
10
10
30 V, 5.1 A N-channel Trench MOSFET
[1]
[2]
2
.
Min
-
-
-
10
10
2
2
Typ
215
85
20
PMN35EN
t
t
p
p
© NXP B.V. 2011. All rights reserved.
(s)
(s)
017aaa281
017aaa282
Max
250
100
30
10
10
3
3
Unit
K/W
K/W
K/W
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