PMN40LN NXP Semiconductors, PMN40LN Datasheet - Page 6

• Manufacturer Part Number: PMN40LN
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 10192
Product data
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
R DSon
(m )
T
T
(A)
I D
j
j
= 25 C
80
60
40
20
= 25 C
20
15
10
0
5
0
function of drain-source voltage; typical values.
of drain current; typical values.
0
0
T j = 25 C
0.2
5
0.4
V GS = 3.2 V
10
0.6
10 V
5 V
15
V GS = 2.4 V
0.8
4.5 V
I D (A)
V DS (V)
03aj87
03aj88
3.6 V
4.5 V
3.6 V
3.2 V
2.8 V
2.6 V
10 V
4 V
4 V
5 V
3 V
Rev. 01 — 13 November 2002
20
1
Fig 6. Transfer characteristics: drain current as a
Fig 8. Normalized drain-source on-state resistance
T
a
(A)
I D
a
j
1.5
0.5
= 25 C and 150 C; V
=
20
15
10
2
1
0
5
0
function of gate-source voltage; typical values.
factor as a function of junction temperature.
--------------------------- -
R
-60
0
DSon 25 C
R
V DS > I D x R DSon
DSon
0
1
T j = 150 C
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
DS
60
2
I
D
x R
25 C
DSon
PMN40LN
120
3
V GS (V)
T j ( C)
03aj89
03af18
180
4
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