PMT21EN NXP Semiconductors, PMT21EN Datasheet - Page 2

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology

PMT21EN

Manufacturer Part Number
PMT21EN
Description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
3. Ordering information
Table 3.
4. Marking
Table 4.
5. Limiting values
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
PMT21EN
Product data sheet
Type number
PMT21EN
Type number
PMT21EN
Symbol
V
V
I
I
P
T
T
T
Source-drain diode
I
D
DM
S
j
amb
stg
DS
GS
tot
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Ordering information
Marking codes
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current0
peak drain current
total power dissipation
junction temperature
ambient temperature
storage temperature
source current
Package
Name
SC-73
Description
plastic surface-mounted package with increased heatsink; 4
leads
All information provided in this document is subject to legal disclaimers.
Conditions
T
V
V
T
T
T
T
Rev. 1 — 30 August 2011
j
amb
amb
sp
amb
GS
GS
= 25 °C
= 25 °C
= 10 V; T
= 10 V; T
= 25 °C; single pulse; t
= 25 °C
= 25 °C
Marking code
MT21EN
amb
amb
= 25 °C
= 100 °C
p
30 V, 7.4 A N-channel Trench MOSFET
≤ 10 µs
[1]
[1]
[2]
[1]
[1]
Min
-
-20
-
-
-
-
-
-
-55
-55
-65
-
PMT21EN
© NXP B.V. 2011. All rights reserved.
2
150
150
150
Version
SOT223
Max
30
20
7.4
4.7
30
820
1760
8330
1.9
.
Unit
V
V
A
A
A
mW
mW
mW
°C
°C
°C
A
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