PMV28UN NXP Semiconductors, PMV28UN Datasheet
PMV28UN
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PMV28UN Summary of contents
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... PMV28UN 20 V, 3.3 A N-channel Trench MOSFET Rev. 1 — 26 May 2011 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low threshold voltage Very fast switching 1.3 Applications ...
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... GS amb °C; single pulse; t amb °C amb ° °C amb All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 May 2011 PMV28UN 20 V, 3.3 A N-channel Trench MOSFET Version SOT23 Min Max - [1] - 3.3 [1] - 2.2 ≤ 10 µs ...
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... T (°C) j Fig 2. Normalized continuous drain current as a function of junction temperature 1 2 All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 May 2011 PMV28UN 20 V, 3.3 A N-channel Trench MOSFET 017aaa124 − 125 175 T (°C) j 017aaa227 (1) (2) (3) (4) ...
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... Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMV28UN Product data sheet Conditions in free air – – All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 May 2011 PMV28UN 20 V, 3.3 A N-channel Trench MOSFET Min Typ Max [1] - 285 330 [2] - 208 240 - ...
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... 4 G(ext ° 0 ° All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 May 2011 PMV28UN 20 V, 3.3 A N-channel Trench MOSFET Min Typ Max 0.4 0 100 - - 100 ...
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... I ( (1) T (2) T Fig 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 May 2011 PMV28UN 20 V, 3.3 A N-channel Trench MOSFET 017aaa231 (1) (2) (3) 0.2 0.4 0.6 0 ° 017aaa233 ...
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... MHz; V (1) C (2) C (3) C Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 May 2011 PMV28UN 20 V, 3.3 A N-channel Trench MOSFET 017aaa235 0 60 120 180 T (°C) j 017aaa237 ...
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... Q (nC °C Fig 15. Gate charge waveform definitions 2 (A) 1.5 (1) 1.0 0.5 0.0 0.0 0.2 0.4 0.6 All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 May 2011 PMV28UN 20 V, 3.3 A N-channel Trench MOSFET GS(pl) V GS(th GS1 GS2 G(tot) 017aaa137 017aaa239 (2) 0 ...
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... Test information Fig 17. Duty cycle definition PMV28UN Product data sheet duty cycle δ 006aaa812 All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 May 2011 PMV28UN 20 V, 3.3 A N-channel Trench MOSFET © NXP B.V. 2011. All rights reserved ...
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... 3.0 1.4 2.5 0.45 1.9 0.95 2.8 1.2 2.1 0.15 REFERENCES JEDEC JEITA TO-236AB All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 May 2011 PMV28UN 20 V, 3.3 A N-channel Trench MOSFET detail 0.55 0.2 0.1 0.45 EUROPEAN ISSUE DATE PROJECTION 04-11-04 06-03-16 © NXP B.V. 2011. All rights reserved. ...
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... All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 May 2011 PMV28UN 20 V, 3.3 A N-channel Trench MOSFET solder lands solder resist solder paste occupied area Dimensions in mm sot023_fr solder lands solder resist occupied area ...
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... NXP Semiconductors 11. Revision history Table 8. Revision history Document ID Release date PMV28UN v.1 20110526 PMV28UN Product data sheet Data sheet status Change notice Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 May 2011 PMV28UN 20 V, 3.3 A N-channel Trench MOSFET ...
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... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 May 2011 PMV28UN 20 V, 3.3 A N-channel Trench MOSFET © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 May 2011 PMV28UN 20 V, 3.3 A N-channel Trench MOSFET © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PMV28UN All rights reserved. Date of release: 26 May 2011 Document identifier: PMV28UN ...