PSMN012-60YS NXP Semiconductors, PSMN012-60YS Datasheet - Page 8

• Manufacturer Part Number: PSMN012-60YS
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN012-60YS_1
Product data sheet
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
V
GS(th)
(A)
(V)
I
D
50
40
30
20
10
5
4
3
2
1
0
0
−60
function of gate-source voltage; typical values
junction temperature
Transfer characteristics: drain current as a
0
0
2
T
j
= 175 °C
60
max
min
typ
4
120
T
j
= 25 °C
V
All information provided in this document is subject to legal disclaimers.
GS
003aad280
T
003aad860
j
(V)
(°C)
180
Rev. 01 — 5 January 2010
6
N-channel LFPAK 60 V, 11.1 mΩ standard level MOSFET
Fig 10. Sub-threshold drain current as a function of
Fig 12. Normalized drain-source on-state resistance
(A)
I
10
10
10
10
10
10
D
a
2.4
1.6
1.2
0.8
0.4
−1
−2
−3
−4
−5
−6
2
0
gate-source voltage
-60
factor as a function of junction temperature.
0
0
2
PSMN012-60YS
min
60
typ
4
120
max
V
© NXP B.V. 2010. All rights reserved.
GS
003aad696
T
j
(V)
(°C)
03aa35
180
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