PSMN030-150P NXP Semiconductors, PSMN030-150P Datasheet - Page 4

• Manufacturer Part Number: PSMN030-150P
• Description: SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN030-150P
Product data sheet
Fig 3.
I
(A)
DM
10
10
10
1
3
2
currents as a function of drain-source voltage
T
Safe operating area; continuous and peak drain
1
mb
R
= 25 °C; I
DS(on)
= V
D.C.
DS
10
DM
/ I
D
is single pulse
10
2
t
100 μs
1 ms
10 ms
100 ms
p
V
All information provided in this document is subject to legal disclaimers.
DS
= 10 μs
003aaf052
(V)
Rev. 02 — 16 December 2010
10
3
N-channel TrenchMOS SiliconMAX standard level FET
Fig 4.
I
(A)
AS
10
10
1
2
10
current as a function of avalanche period
unclamped inductive load
Single-shot avalanche rating; avalanche
−3
T
j
prior to avalanche = 150 °C
10
−2
PSMN030-150P
10
−1
1
© NXP B.V. 2010. All rights reserved.
25 °C
t
AV
003aaf064
(ms)
10
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