PSMN1R2-30YLC NXP Semiconductors, PSMN1R2-30YLC Datasheet - Page 9

• Manufacturer Part Number: PSMN1R2-30YLC
• Description: Logic level enhancement mode N-channel MOSFET in LFPAK package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN1R2-30YLC
Product data sheet
Fig 12. Drain-source on-state resistance as a function
Fig 14. Gate charge waveform definitions
R
(mΩ)
DS on
6
5
4
3
2
1
0
of drain current; typical values
0
V
V
V
V
GS(pl)
DS
GS(th)
GS
Q
25
GS1
I
Q
D
GS
Q
GS2
50
Q
G(tot)
Q
GD
2.6
75
N-channel 30 V 1.25mΩ logic level MOSFET in LFPAK using NextPower
V
GS
4.5
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003a a f 558
003aaa508
I
(V) = 2.8
D
(A)
3.0
3.5
10
100
Rev. 1 — 3 May 2011
Fig 13. Normalized drain-source on-state resistance
Fig 15. Gate-source voltage as a function of gate
V
(V)
a
GS
1.5
0.5
10
2
1
0
8
6
4
2
0
-60
factor as a function of junction temperature
charge; typical values
0
25
0
PSMN1R2-30YLC
V
GS
6V
60
50
= 4.5V
V
DS
= 15V
24V
120
75
© NXP B.V. 2011. All rights reserved.
10V
003a a f 559
003a a f 565
Q
Tj ( C)
G
(nC)
180
100
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