PSMN1R5-40ES NXP Semiconductors, PSMN1R5-40ES Datasheet - Page 3

PSMN1R5-40ES

Manufacturer Part Number
PSMN1R5-40ES
Description
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
PSMN1R5-40ES
Product data sheet
Fig 1.
Fig 3.
(A)
(A)
I
I
D
D
10
10
10
10
350
300
250
200
150
100
10
50
-1
4
3
2
1
0
10
function of mounting base temperature
Normalized continuous drain current as a
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
-1
50
Limit R
(1)
100
DS on
= V
DS
/ I
150
D
All information provided in this document is subject to legal disclaimers.
T
003a a f329
mb
1
(°C)
200
Rev. 01 — 19 April 2011
N-channel 40 V 1.6 mΩ standard level MOSFET in I2PAK.
Fig 2.
P
(%)
DC
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
10
50
PSMN1R5-40ES
100
V
DS
(V)
t
100 μ s
1 ms
10 ms
100 ms
p
150
=10 μ s
© NXP B.V. 2011. All rights reserved.
T
003a a f328
mb
03aa16
(°C)
10
200
2
3 of 14

Related parts for PSMN1R5-40ES