PSMN3R7-30YLC NXP Semiconductors, PSMN3R7-30YLC Datasheet - Page 9

• Manufacturer Part Number: PSMN3R7-30YLC
• Description: Logic level enhancement mode N-channel MOSFET in LFPAK package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN3R7-30YLC
Product data sheet
Fig 12. Drain-source on-state resistance as a function
Fig 14. Gate charge waveform definitions
(mΩ)
R
DS on
16
12
8
4
0
of drain current; typical values
0
V
V
V
V
GS(pl)
DS
GS(th)
GS
20
Q
GS1
2.8
I
Q
D
GS
40
Q
GS2
Q
G(tot)
3.0
60
Q
GD
N-channel 30 V 3.95mΩ logic level MOSFET in LFPAK using NextPower
V
GS
80
All information provided in this document is subject to legal disclaimers.
003a a f 682
003aaa508
(V) =
I
D
(A)
3.5
4.5
10
100
Rev. 01 — 2 May 2011
Fig 13. Normalized drain-source on-state resistance
Fig 15. Gate-source voltage as a function of gate
V
(V)
a
GS
1.5
0.5
10
2
1
0
8
6
4
2
0
-60
factor as a function of junction temperature
charge; typical values
0
10
0
PSMN3R7-30YLC
V
DS
60
20
V
= 6V
GS
15V
=10V
24V
120
30
© NXP B.V. 2011. All rights reserved.
003a a f 683
003a a f 689
Q
T
G
4.5V
j
(°C)
(nC)
180
40
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