PSMN3R8-100BS NXP Semiconductors, PSMN3R8-100BS Datasheet - Page 7

• Manufacturer Part Number: PSMN3R8-100BS
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN3R8-100BS
Product data sheet
Fig 9.
Fig 11. Sub-threshold drain current as a function of
R
(m Ω )
(A)
I
DSon
10
10
10
10
10
10
D
20
15
10
−1
−2
−3
−4
−5
−6
5
0
of gate-source voltage; typical values
gate-source voltage
Drain-source on-state resistance as a function
0
0
5
2
min
10
typ
4
15
max
V
All information provided in this document is subject to legal disclaimers.
GS
V
003aag700
GS
(V)
03aa35
(V)
Rev. 2 — 29 February 2012
20
6
N-channel 100 V 3.9 mΩ standard level MOSFET in D2PAK
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Drain-source on-state resistance as a function
V
GS(th)
(V)
R
(mΩ)
DSon
5
4
3
2
1
0
10
8
6
4
2
−60
junction temperature
of drain current; typical values
0
30
0
PSMN3R8-100BS
60
V
GS
60
(V) =5.5
max
min
typ
90
10.0
6.0
8.0
20.0
120
120
© NXP B.V. 2012. All rights reserved.
15.0
003aag698
003aad280
T
j
I
(°C)
D
(A)
150
180
7 of 14