PSMN4R5-40PS NXP Semiconductors, PSMN4R5-40PS Datasheet - Page 6

• Manufacturer Part Number: PSMN4R5-40PS
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 6.
Tested to JEDEC standards where applicable.
[1]
PSMN4R5-40PS_2
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
SD
r
Measured 3 mm from package.
300
(A)
250
200
150
100
I
D
50
0
function of drain-source voltage; typical values
Output characteristics: drain current as a
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
20
1
15
10
7.5
2
…continued
3
V
GS
(V) = 7
4
Conditions
I
Figure 17
I
V
I
V
S
S
S
DS
DS
= 25 A; V
= 50 A; dI
= 50 A; dI
= 20 V
= 20 V; T
003aad020
5
V
DS
6.5
5.5
4.5
(V)
6
5
GS
S
S
6
Rev. 02 — 25 June 2009
/dt = -100 A/µs; V
/dt = -100 A/µs; V
j
= 25 °C
= 0 V; T
j
= 25 °C; see
Fig 6.
N-channel 40 V 4.6 mΩ standard level MOSFET
R
(mΩ)
GS
GS
DSon
10
8
6
4
2
= 0 V;
= 0 V;
of drain current; typical values
Drain-source on-state resistance as a function
0
50
6
PSMN4R5-40PS
100
V
Min
-
-
-
GS
(V) = 6.5
150
Typ
0.75
40
33
© NXP B.V. 2009. All rights reserved.
7
200
003aad021
Max
1.2
-
-
I
D
(A)
7.5
10
20
15
250
Unit
V
ns
nC
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