PSMN6R0-30YLB NXP Semiconductors, PSMN6R0-30YLB Datasheet - Page 9

• Manufacturer Part Number: PSMN6R0-30YLB
• Description: Logic level enhancement mode N-channel MOSFET in LFPAK package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN6R0-30YLB
Product data sheet
Fig 12. Drain-source on-state resistance as a function
Fig 14. Gate charge waveform definitions
R
(mΩ)
DSon
25
20
15
10
5
0
of drain current; typical values
0
V
V
V
V
GS(pl)
DS
GS(th)
GS
2.6
Q
20
GS1
I
Q
D
2.8
GS
N-channel 30 V 6.5 mΩ logic level MOSFET in LFPAK using NextPower technology
Q
GS2
40
Q
G(tot)
V
Q
GS
GD
(V) = 3.0
60
003aag100
All information provided in this document is subject to legal disclaimers.
003aaa508
I
D
(A)
3.5
4.5
10
80
Rev. 2 — 24 October 2011
Fig 13. Normalized drain-source on-state resistance
Fig 15. Gate-source voltage as a function of gate
V
a
(V)
GS
1.5
0.5
10
2
1
0
8
6
4
2
0
-60
factor as a function of junction temperature
charge; typical values
0
0
5
PSMN6R0-30YLB
6V
60
10
24V
4.5V
120
15
V
DS
© NXP B.V. 2011. All rights reserved.
V
Q
003aag101
003aag102
GS
= 15V
T
G
j
(nC)
=10V
( ° C)
180
20
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