PSMN7R6-60BS NXP Semiconductors, PSMN7R6-60BS Datasheet

PSMN7R6-60BS

Manufacturer Part Number
PSMN7R6-60BS
Description
Manufacturer
NXP Semiconductors
Datasheet
1. Product profile
Table 1.
Symbol
V
I
P
T
Static characteristics
R
Dynamic characteristics
Q
Q
Avalanche ruggedness
E
D
j
DS
tot
DS(AL)S
DSon
GD
G(tot)
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
junction temperature
drain-source on-state
resistance
gate-drain charge
total gate charge
non-repetitive
drain-source
avalanche energy
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
PSMN7R6-60BS
N-channel 60 V 7.8 mΩ standard level MOSFET in D2PAK
Rev. 2 — 2 March 2012
High efficiency due to low switching
and conduction losses
DC-to-DC converters
Load switching
Conditions
T
T
T
V
see
V
see
V
see
V
V
j
mb
mb
GS
GS
GS
GS
sup
≥ 25 °C; T
Figure
Figure
Figure
= 25 °C; V
= 25 °C; see
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; T
≤ 100 V; R
13; see
15; see
14; see
j
D
D
D
≤ 175 °C
j(init)
GS
= 25 A; T
= 25 A; V
= 25 A; V
GS
Figure 2
= 10 V; see
= 25 °C; I
= 50 Ω; unclamped
Figure 9
Figure 14
Figure 15
j
DS
DS
= 25 °C;
= 30 V;
= 30 V;
D
= 92 A;
Figure 1
Suitable for standard level gate drive
sources
Motor control
Server power supplies
Min
-
-
-
-55
-
-
-
-
Product data sheet
Typ
-
-
-
-
5.9
10.6
38.7
-
Max
60
92
149
175
7.8
-
-
110
V
°C
mΩ
nC
nC
Unit
A
W
mJ

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PSMN7R6-60BS Summary of contents

Page 1

... PSMN7R6-60BS N-channel 60 V 7.8 mΩ standard level MOSFET in D2PAK Rev. 2 — 2 March 2012 1. Product profile 1.1 General description Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. ...

Page 2

... T pulsed ° ° j(init) ≤ 100 Ω; unclamped V sup GS All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 March 2012 PSMN7R6-60BS Graphic symbol mbb076 Version SOT404 Min Max - -20 20 Figure 1 ...

Page 3

... T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature DC 10 All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 March 2012 PSMN7R6-60BS 0 50 100 150 T 003aad700 10 μs 100 μ 100 ms V (V) DS © NXP B.V. 2012. All rights reserved. ...

Page 4

... Product data sheet N-channel 60 V 7.8 mΩ standard level MOSFET in D2PAK Conditions see Figure 4 Minimum footprint; mounted on a printed circuit board −3 − All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 March 2012 PSMN7R6-60BS Min Typ Max - 0.49 1. 003aad662 δ ...

Page 5

... MHz °C; see Figure 16; see Figure 1.2 Ω 4.7 Ω R G(ext) All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 March 2012 PSMN7R6-60BS Min Typ Max 4 ...

Page 6

... V (V) = 4 (V) DS Fig 6. 003aad665 = 25 ° (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 March 2012 PSMN7R6-60BS Min - = 160 g fs (S) 120 Forward transconductance as a function of drain current; typical values 4000 C iss ...

Page 7

... T (°C) j Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 March 2012 PSMN7R6-60BS 03aa35 min typ max (V) GS 003aad696 0 60 120 180 T (°C) j © ...

Page 8

... I (A) D Fig 14. Gate-source voltage as a function of gate Q GD 003aaa508 Fig 16. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 March 2012 PSMN7R6-60BS ( charge ...

Page 9

... Product data sheet N-channel 60 V 7.8 mΩ standard level MOSFET in D2PAK 100 175 ° 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 March 2012 PSMN7R6-60BS 003aad670 = 25 ° 0.9 1.2 V (V) SD © NXP B.V. 2012. All rights reserved ...

Page 10

... max. 1.60 10.30 2.90 11 2.54 1.20 9.70 2.10 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 March 2012 PSMN7R6-60BS mounting base 15.80 2.60 14.80 2.20 EUROPEAN PROJECTION SOT404 ISSUE DATE 05-02-11 06-03-16 © NXP B.V. 2012. All rights reserved ...

Page 11

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN7R6-60BS v.2 20120302 • Modifications: Status changed from objective to product. • Various changes to content. PSMN7R6-60BS v.1 20111020 PSMN7R6-60BS Product data sheet N-channel 60 V 7.8 mΩ standard level MOSFET in D2PAK Data sheet status Change notice ...

Page 12

... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 March 2012 PSMN7R6-60BS © NXP B.V. 2012. All rights reserved ...

Page 13

... Plus,MIFARE Ultralight,MoReUse,QLPAK,Silicon Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMediaand UCODE— are trademarks of NXP B.V. HD RadioandHD Radiologo — are trademarks of iBiquity Digital Corporation. to:salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 March 2012 PSMN7R6-60BS © NXP B.V. 2012. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 2 March 2012 Document identifier: PSMN7R6-60BS ...

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