PSMN9R5-100BS NXP Semiconductors, PSMN9R5-100BS Datasheet - Page 7

• Manufacturer Part Number: PSMN9R5-100BS
• Description: Standard level N-channel MOSFET in a D2PAK package qualified to 175C
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN9R5-100BS
Product data sheet
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
V
GS(th)
(A)
(V)
I
D
80
60
40
20
5
4
3
2
1
0
0
−60
function of gate-source voltage; typical values
junction temperature
Transfer characteristics: drain current as a
0
0
2
T
j
= 175 °C
60
max
min
typ
4
120
T
j
V
All information provided in this document is subject to legal disclaimers.
= 25 °C
GS
003aad280
T
003aae020
j
(°C)
(V)
180
6
Rev. 2 — 2 March 2012
N-channel 100 V 9.6 mΩ standard level MOSFET in D2PAK
Fig 10. Sub-threshold drain current as a function of
Fig 12. Normalized drain-source on-state resistance
(A)
a
I
10
10
10
10
10
10
D
3.2
2.4
1.6
0.8
−1
−2
−3
−4
−5
−6
0
-60
gate-source voltage
factor as a function of junction temperature
0
0
PSMN9R5-100BS
2
min
60
typ
4
120
max
V
© NXP B.V. 2012. All rights reserved.
GS
003aad774
T
j
(V)
(°C)
03aa35
180
6
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