PSMN9R5-100XS NXP Semiconductors, PSMN9R5-100XS Datasheet - Page 5

Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C

PSMN9R5-100XS

Manufacturer Part Number
PSMN9R5-100XS
Description
Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
5. Thermal characteristics
Table 5.
6. Isolation characteristics
Table 6.
[1]
PSMN9R5-100XS
Preliminary data sheet
Symbol
R
R
Symbol
C
V
Fig 5.
isol(RMS)
th(j-mb)
th(j-a)
isol
Z
(K/W)
th(j-mb)
f = 1 MHz
10
10
10
10
-1
-2
-3
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
-6
Thermal characteristics
Isolation characteristics
δ = 0.5
0.05
0.02
0.1
0.2
Parameter
thermal resistance from junction to mounting base
thermal resistance from junction to ambient
Parameter
isolation capacitance
RMS isolation voltage
single shot
10
-5
10
-4
N-channel 100V 9.6 mΩ standard level MOSFET in TO220F (SOT186A)
Conditions
50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; sinusoidal
waveform; clean and dust free
All information provided in this document is subject to legal disclaimers.
10
-3
Rev. 2 — 20 October 2011
10
-2
Conditions
see
vertical in free air
Figure 5
10
-1
PSMN9R5-100XS
1
[1]
Min
-
-
Min
-
-
P
10
t
Typ
2.6
55
p
Typ
10
-
T
© NXP B.V. 2011. All rights reserved.
t
003aag592
p
δ =
(s)
-
Max
2.85
Max
-
2500
T
t
p
t
10
2
Unit
K/W
K/W
Unit
pF
V
5 of 15

Related parts for PSMN9R5-100XS