BLF242 NXP Semiconductors, BLF242 Datasheet - Page 6

Silicon N-channel enhancement mode vertical D-MOS transistor designed for professional transmitter applications in the HF/VHF frequency range

BLF242

Manufacturer Part Number
BLF242
Description
Silicon N-channel enhancement mode vertical D-MOS transistor designed for professional transmitter applications in the HF/VHF frequency range
Manufacturer
NXP Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BLF242
Manufacturer:
PHILIPS
Quantity:
4
Part Number:
BLF242
Manufacturer:
NXP
Quantity:
5 000
Part Number:
BLF242
Manufacturer:
ASI
Quantity:
20 000
Part Number:
BLF2425M6L180P
Manufacturer:
Intersil
Quantity:
1 400
Part Number:
BLF2425M6L180P,112
Manufacturer:
NXP
Quantity:
1 400
Part Number:
BLF2425M6LS180P
Manufacturer:
NXP
Quantity:
1 400
Philips Semiconductors
APPLICATION INFORMATION FOR CLASS-B OPERATION
T
RF performance in CW operation in a common source class-B test circuit.
Ruggedness in class-B operation
The BLF242 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases under the
following conditions: V
Noise figure (see Fig.11)
V
F = typ. 5.5 dB.
2003 Oct 13
handbook, halfpage
MODE OF OPERATION
CW, class-B
h
DS
HF-VHF power MOS transistor
= 25 C; R
V
Fig.8
GS
= 28 V; I
(pF)
C rs
= 0; f = 1 MHz.
6
4
2
0
0
Feedback capacitance as a function of
drain-source voltage, typical values.
D
th mb-h
= 0.2 A; f = 175 MHz; R
= 0.3 K/W; unless otherwise specified.
10
DS
= 28 V; f =175 MHz at rated output power.
(MHz)
175
f
20
GS
V DS (V)
= 47 ; T
V
(V)
28
MBB775
DS
30
h
= 25 C. Input and output power matched for P
(mA)
I
10
DQ
6
(W)
P
5
L
typ. 16
(dB)
G
13
P
typ. 60
(%)
50
D
Product specification
L
= 5 W;
BLF242
R
( )
47
GS

Related parts for BLF242