BLF245 NXP Semiconductors, BLF245 Datasheet - Page 7

• Manufacturer Part Number: BLF245
• Description: Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range
• Manufacturer: NXP Semiconductors

Philips Semiconductors
2003 Sep 02
handbook, halfpage
handbook, halfpage
VHF power MOS transistor
Class-B operation; V
f = 175 MHz; T
Fig.9
Class-B operation; V
f = 175 MHz; T
Fig.11 Power gain and efficiency as functions of
(dB)
(dB)
G p
G p
20
10
20
10
0
0
10
0
Power gain and efficiency as functions of
load power; typical values.
load power; typical values.
h
h
= 25 C; R
= 25 C; R
20
DS
DS
= 28 V; I
= 12.5 V; I
th mb-h
th mb-h
G p
D
DQ
30
10
= 0.3 K/W.
= 0.3 K/W.
DQ
= 50 mA;
= 50 mA;
P L (W)
G p
40
D
P L (W)
MGP172
MGP173
50
20
100
50
0
100
50
0
(%)
(%)
D
D
7
handbook, halfpage
handbook, halfpage
Class-B operation; V
f = 175 MHz; T
Fig.10 Load power as a function of input power;
Class-B operation; V
f = 175 MHz; T
Fig.12 Load power as a function of input power;
(W)
(W)
P L
P L
20
10
60
50
40
30
20
10
0
0
0
typical values.
typical values.
h
h
= 25 C; R
= 25 C; R
0.6
0.6
DS
DS
= 28 V; I
= 12.5 V; I
th mb-h
th mb-h
DQ
1.2
1.2
= 0.3 K/W.
= 0.3 K/W.
DQ
= 50 mA;
= 50 mA;
Product specification
1.8
1.8
P IN (W)
P IN (W)
BLF245
MEA737
MEA736
2.4
2.4