BLF404 NXP Semiconductors, BLF404 Datasheet - Page 6

Silicon N-channel enhancement mode vertical D-MOS power transistor in an 8-lead SOT409A SMD package with a ceramic cap

BLF404

Manufacturer Part Number
BLF404
Description
Silicon N-channel enhancement mode vertical D-MOS power transistor in an 8-lead SOT409A SMD package with a ceramic cap
Manufacturer
NXP Semiconductors
Datasheet

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APPLICATION INFORMATION
RF performance at T
through metallized holes.
Ruggedness in class-AB operation
The BLF404 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: f = 500 MHz; V
2003 Sep 26
handbook, halfpage
CW, class-AB
UHF power MOS transistor
V
Fig.7
GS
(pF)
MODE OF OPERATION
C rs
= 0; f = 1 MHz; T
10
8
6
4
2
0
0
Feedback capacitance as a function of
drain-source voltage; typical values.
4
j
= 25 C.
mb
60 C in a common source test circuit with the device soldered on a printed-circuit board with
8
DS
12
(MHz)
= 12.5 V; P
500
V DS (V)
f
MRA256
16
12.5
V
L
(V)
DS
= 4 W; T
6
mb
I
(A)
50
DQ
60 C.
(W)
P
4
L
typ. 11.5
(dB)
G
10
p
Product specification
BLF404
typ. 55
(%)
50
D

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