BLF6G13LS-250P NXP Semiconductors, BLF6G13LS-250P Datasheet - Page 4

• Manufacturer Part Number: BLF6G13LS-250P
• Description: 250 W LDMOS power transistor intended for CW applications at a frequency of 1
• Manufacturer: NXP Semiconductors

NXP Semiconductors
7. Application information
BLF6G13L-250P_6G13LS-250P
Product data sheet
7.1 CW
7.2 2-Carrier CW
Fig 1.
Fig 2.
V
Power gain and drain efficiency as function of load power; typical values
V
Power gain and drain efficiency as function of load power; typical values
DS
DS
= 50 V; I
= 50 V; I
BLF6G13L-250P; BLF6G13LS-250P
All information provided in this document is subject to legal disclaimers.
Dq
Dq
(dB)
(dB)
G
G
= 100 mA.
= 100 mA; carrier spacing = 100 kHz.
Rev. 3 — 14 October 2011
p
p
19
16
13
10
19
16
13
10
0
0
50
G
η
D
p
G
η
100
D
p
100
150
200
200
250
P
P
L
001aan868
001aan869
300
L
(W)
(W)
350
300
Power LDMOS transistor
60
45
30
15
60
45
30
15
(%)
(%)
η
η
D
D
© NXP B.V. 2011. All rights reserved.
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