BLF6H10LS-160 NXP Semiconductors, BLF6H10LS-160 Datasheet
BLF6H10LS-160
Related parts for BLF6H10LS-160
BLF6H10LS-160 Summary of contents
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... BLF6H10L-160; BLF6H10LS-160 Power LDMOS transistor Rev. 1 — 10 February 2012 1. Product profile 1.1 General description A 160 W LDMOS RF power transistor for base station applications. The transistor can deliver 160 W from GHz. The excellent ruggedness and broadband performance of this device makes it ideal for base station applications. ...
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... stg Thermal characteristics Table 5. Symbol R th(j-c) [1] R th(j-c) BLF6H10L-160_6H10LS-160 Objective data sheet BLF6H10L-160; BLF6H10LS-160 Pinning Description drain gate source drain gate source Ordering information Package Name Description - flanged LDMOST ceramic package; 2 mounting holes; 2 leads earless LDMOST ceramic package; 2 leads Limiting values ...
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... I is the drain current. D Table Symbol Parameter 2-carrier W-CDMA L(AV D ACPR Fig 1. BLF6H10L-160_6H10LS-160 Objective data sheet BLF6H10L-160; BLF6H10LS-160 Conditions 1. 3. GSth 3.75 V ...
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... NXP Semiconductors 7. Application information 7.1 Ruggedness in class-AB operation The BLF6H10L-160 and BLF6H10LS-160 are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 860 MHz at rated power. Ruggedness is measured in the application DS circuit. 7.2 Impedance information Table 8. Simulated Z ...
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... DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT 4.67 5.59 0.15 9.25 mm 3.94 9.04 5.33 0.10 0.184 0.220 0.006 0.364 inch 0.155 0.210 0.004 0.356 OUTLINE VERSION IEC SOT467C Fig 3. Package outline SOT467C BLF6H10L-160_6H10LS-160 Objective data sheet BLF6H10L-160; BLF6H10LS-160 scale 3.43 9.27 5.92 5.97 1.65 18.54 9.02 5.77 5 ...
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... Note 1. millimeter dimensions are derived from the original inch dimensions. Outline version IEC SOT467B Fig 4. Package outline SOT467B BLF6H10L-160_6H10LS-160 Objective data sheet BLF6H10L-160; BLF6H10LS-160 ...
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... W-CDMA 11. Revision history Table 10. Revision history Document ID BLF6H10L-160_6H10LS-160 v.1 BLF6H10L-160_6H10LS-160 Objective data sheet BLF6H10L-160; BLF6H10LS-160 Abbreviations Description 3rd Generation Partnership Project Code Division Multiple Access Complementary Cumulative Distribution Function Dedicated Physical CHannel Enhanced Data rates for GSM Evolution Global System for Mobile Communications ...
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... This document supersedes and replaces all information supplied prior to the publication hereof. BLF6H10L-160_6H10LS-160 Objective data sheet BLF6H10L-160; BLF6H10LS-160 [3] Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. ...
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... For sales office addresses, please send an email to: BLF6H10L-160_6H10LS-160 Objective data sheet BLF6H10L-160; BLF6H10LS-160 NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
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... Trademarks Contact information Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 BLF6H10L-160; BLF6H10LS-160 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Power LDMOS transistor All rights reserved ...