BLF7G10L-250 NXP Semiconductors, BLF7G10L-250 Datasheet - Page 6

• Manufacturer Part Number: BLF7G10L-250
• Description: 250 W LDMOS power transistor for base station applications at frequencies from 920 MHz to 960 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G10L-250_7G10LS-250
Product data sheet
Fig 7.
Fig 9.
RL
(dB)
(1) f = 920 MHz
(2) f = 940 MHz
(3) f = 960 MHz
(1) f = 920 MHz
(2) f = 940 MHz
(3) f = 960 MHz
-10
in
-14
-18
-22
38
V
Input return loss as a function of output
power; typical values
V
Peak-to-average ratio as a function of output power; typical values
DS
DS
= 30 V; I
= 30 V; I
(1)
(2)
(3)
42
Dq
Dq
= 1800 mA.
= 1800 mA.
46
PAR
(dB)
50
9
8
7
6
5
38
P
All information provided in this document is subject to legal disclaimers.
aaa-001564
L
(dBm)
BLF7G10L-250; BLF7G10LS-250
Rev. 3 — 16 February 2012
54
42
(1)
(2)
(3)
46
Fig 8.
ACPR
(dBc)
(1) f = 920 MHz
(2) f = 940 MHz
(3) f = 960 MHz
-20
-30
-40
-50
-60
50
38
V
Adjacent channel power ratio (5 MHz and
10 MHz) as function of output power; typical
values
P
DS
aaa-001568
L
(dBm)
= 30 V; I
54
42
(1)
(2)
(3)
Dq
(1)
(2)
(3)
= 1800 mA.
46
Power LDMOS transistor
ACPR
ACPR
50
© NXP B.V. 2012. All rights reserved.
5M
10M
P
aaa-001566
L
(dBm)
54
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