BLF7G15LS-200 NXP Semiconductors, BLF7G15LS-200 Datasheet - Page 8

• Manufacturer Part Number: BLF7G15LS-200
• Description: 200 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
9. Abbreviations
10. Revision history
Table 12.
BLF7G15LS-200
Product data sheet
Document ID
BLF7G15LS-200 v.3
Modifications:
BLF7G15LS-200 v.2
BLF7G15LS-200 v.1
Revision history
Table 11.
Acronym
3GPP
CCDF
CW
DPCH
ESD
LDMOS
LDMOST
PAR
RF
VSWR
W-CDMA
Release date
20110722
20110301
20100913
•
Abbreviations
The status of this data sheet has been changed to Product data sheet
All information provided in this document is subject to legal disclaimers.
Description
Third Generation Partnership Project
Complementary Cumulative Distribution Function
Continuous Wave
Dedicated Physical CHannel
ElectroStatic Discharge
Laterally Diffused Metal Oxide Semiconductor
Laterally Diffused Metal Oxide Semiconductor Transistor
Peak-to-Average power Ratio
Radio Frequency
Voltage Standing Wave Ratio
Wideband Code Division Multiple Access
Rev. 3 — 22 July 2011
Data sheet status
Product data sheet
Preliminary data sheet
Preliminary data sheet
Change notice
-
-
-
BLF7G15LS-200
Power LDMOS transistor
BLF7G15LS-200 v.2
BLF7G15LS-200 v.1
-
Supersedes
© NXP B.V. 2011. All rights reserved.
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