BLF7G27L-100 NXP Semiconductors, BLF7G27L-100 Datasheet - Page 5

• Manufacturer Part Number: BLF7G27L-100
• Description: 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G27L-100_7G27LS-100
Product data sheet
Fig 3.
Fig 5.
ACPR
(dBc)
PAR
(dB)
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
−30
−40
−50
−60
−70
885k
10
9
8
7
6
0
V
Single carrier IS-95 ACPR at 885 kHz as a
function of average output power;
typical values
0
V
Single carrier IS-95 peak-to-average power
ratio as a function of average output power;
typical values
DS
DS
= 28 V; I
= 28 V; I
(1)
(2)
(3)
Dq
Dq
10
10
= 900 mA.
= 900 mA.
20
20
P
P
L(AV)
L(AV)
All information provided in this document is subject to legal disclaimers.
001aan540
001aan542
(W)
(W)
(1)
(2)
(3)
BLF7G27L-100; BLF7G27LS-100
30
30
Rev. 3 — 22 July 2011
Fig 4.
Fig 6.
ACPR
(dBc)
P
(W)
L(M)
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
−50
−60
−70
−80
160
120
1980k
80
40
0
0
0
V
Single carrier IS-95 ACPR at 1980 kHz as a
function of average output power;
typical values
V
Single carrier IS-95 peak output power as a
function of average output power;
typical values
DS
DS
= 28 V; I
= 28 V; I
Dq
Dq
10
10
= 900 mA.
= 900 mA.
Power LDMOS transistor
20
20
P
P
L(AV)
L(AV)
© NXP B.V. 2011. All rights reserved.
001aan541
001aan543
(W)
(W)
(1)
(2)
(3)
(1)
(2)
(3)
30
30
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