BLF7G27L-100 NXP Semiconductors, BLF7G27L-100 Datasheet - Page 6

• Manufacturer Part Number: BLF7G27L-100
• Description: 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G27L-100_7G27LS-100
Product data sheet
Fig 7.
(dB)
G
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
p
19
18
17
16
15
0
V
Pulsed CW power gain as a function of output
power; typical values
DS
= 28 V; I
7.3 Pulsed CW
Dq
40
= 900 mA.
(1)
(2)
(3)
80
P
All information provided in this document is subject to legal disclaimers.
L
001aan544
(W)
BLF7G27L-100; BLF7G27LS-100
120
Rev. 3 — 22 July 2011
Fig 8.
(%)
η
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
D
60
40
20
0
0
V
Pulsed CW drain efficiency as a function of
output power; typical values
DS
= 28 V; I
Dq
40
= 900 mA.
Power LDMOS transistor
80
© NXP B.V. 2011. All rights reserved.
P
L
001aan545
(W)
(1)
(2)
(3)
120
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