BLF7G27LS-150P NXP Semiconductors, BLF7G27LS-150P Datasheet - Page 2

150 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz

BLF7G27LS-150P

Manufacturer Part Number
BLF7G27LS-150P
Description
150 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz
Manufacturer
NXP Semiconductors
Datasheet

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Part Number
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Quantity
Price
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Part Number:
BLF7G27LS-150P
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2. Pinning information
3. Ordering information
4. Limiting values
BLF7G27L-150P_7G27LS-150P
Product data sheet
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
BLF7G27L-150P (SOT539A)
1
2
3
4
5
BLF7G27LS-150P (SOT539B)
1
2
3
4
5
Type number
BLF7G27L-150P
BLF7G27LS-150P
Symbol
V
V
I
T
T
D
stg
j
DS
GS
Connected to flange.
Pinning
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
drain1
drain2
gate1
gate2
source
drain1
drain2
gate1
gate2
source
Description
BLF7G27L-150P; BLF7G27LS-150P
All information provided in this document is subject to legal disclaimers.
Package
Name Description
-
-
Rev. 1 — 12 November 2010
flanged balanced LDMOST ceramic package;
2 mounting holes; 4 leads
earless flanged balanced LDMOST ceramic package;
4 leads
Conditions
[1]
[1]
Simplified outline
1
3
1
3
2
4
2
4
Power LDMOS transistor
5
5
Graphic symbol
-
Min
-
−0.5
-
−65
© NXP B.V. 2010. All rights reserved.
3
4
3
4
Max
65
+13
37
+150
225
Version
SOT539A
SOT539B
1
2
1
2
sym117
sym117
2 of 14
5
5
Unit
V
V
A
°C
°C

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